The Bandwidth Engine family of ICs utilizes MoSys' patented 1T-SRAM® embedded memory technology to achieve an unparalleled combination of performance, density, reliability, low power and cost. 1T-SRAM combines the high capacity and low power of embedded DRAM (eDRAM) with the performance and ease of use of traditional (6T) SRAM.
MoSys' patented 1T-SRAM memory technology is based on a dynamic bit cell, which uses a single transistor and capacitor achieving a considerable size and soft error immunity advantage over six-transistor SRAMs (6T-SRAMs) and other conventional SRAM cells. MoSys surrounds the array of bit cells with architectural and circuit innovations to create an optimized, high-performance memory core for the Bandwidth Engine family of ICs.
Advantages of MoSys' 1T-SRAM Technology in the Bandwidth Engine:
High Density - up to 3X smaller silicon area than 6T SRAM
Low Power Consumption - Up to 50% lower than 6T SRAM
Ease of Manufacture - Standard logic process
Ease of Use - Simple, standard SRAM interface
High Speed - SRAM performance, Low latency random access
High Reliability - Dramatically reduced SER ( < 10 FIT/Mbit)