SUNNYVALE, Calif., April 5, 2007 /PRNewswire-FirstCall via COMTEX News Network/ -- MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP) solutions, today named Takashi Murayama (56) as vice president and country manager, Japan. Murayama-san joins MoSys from Transmeta Corp. where he served as vice president of Transmeta Japan, while simultaneously overseeing the company's broader Asia-Pacific operations. Reporting to MoSys' vice president of worldwide sales, Raj Singh, Murayama-san will drive the company's sales and marketing operations in the region.
Japan is a key market for MoSys, as evidenced by recent design wins and technology announcements with NEC, Fujitsu, and others. Murayama-san will lead the company's sales and marketing initiatives in the region, leveraging his extensive network to forge new customer partnerships for the company.
"Murayama's combination of business experience and technology savvy make him a superb candidate to drive MoSys' continued expansion in Japan," said Singh. "For more than two decades, he has successfully established a strong presence in Japan for multiple international technology companies such as Intel, Conexant, and Transmeta. Along the way, he has skillfully managed complex IP agreements with large Japanese customers, making him a great addition to MoSys as we further penetrate this key market with our memory IP solutions."
About MoSys, Inc.
Founded in 1991, MoSys, develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys' patented 1T-SRAM(R) and 1T-FLASH(R) technologies offer a combination of high density, low power consumption, high speed and low cost that is unmatched by other memory technologies. MoSys licensees have shipped more than 100 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available at http://www.mosys.com.
NOTE: 1T-SRAM and 1T-FLASH are registered trademarks of MoSys, Inc.
SOURCE MoSys, Inc.
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