MoSys to Announce Fourth Quarter and Fiscal Year 2006 Financial Results


SUNNYVALE, Calif.--(BUSINESS WIRE)--Jan. 24, 2007--MoSys, Inc., (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP), today announced it would release its fourth quarter and fiscal year 2006 results for the period ending December 31, 2006 on Monday, February 12, 2007 after the market closes. Following the release, the Company will host a live audio Web cast and conference call at 4:30 p.m. Eastern Time (1:30 p.m. Pacific Time).

Fourth Quarter Web Cast/Conference Call

To access the call, please dial 866-383-7989 and enter the pass code 42264550 at least 10 minutes prior to the start of the call.

Date: Monday, February 12, 2007

Time: 4:30 p.m. Eastern Time (1:30 p.m. Pacific Time)

Conference Call Number: 866-383-7989

International Callers: 617-597-5328

Pass Code: 42264550

The conference call replay will be available for 48 hours beginning two hours after the call. The replay number is 888-286-8010 with a pass code of 68107821. International callers should dial 617-801-6888 and enter the same pass code at the prompt.

In addition, the live audio conference call and replay will be available on the investor relations section of the company's Web site at http://www.mosys.com.

About MoSys, Inc.

Founded in 1991, MoSys, Inc. (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 100 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

CONTACT: MoSys, Inc., Sunnyvale
Jim Pekarsky, CFO, 408-731-1800
jimp@mosys.com
or
Shelton IR
Beverly Twing, Acct. Manager, 972-239-5119 x126
btwing@sheltongroup.com

SOURCE: MoSys, Inc.