MoSys, Inc. to Present at 2006 UBS Global Communications and Technology Conference

SUNNYVALE, Calif.--(BUSINESS WIRE)--Nov. 2, 2006--MoSys, Inc. (NASDAQ:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP), today announced that Chet Silvestri, Chief Executive Officer, will be presenting at the 2006 UBS Global Communications and Technology Conference at the Grand Hyatt in New York City on Wednesday, November 15, 2006 at 10:00 a.m. ET.

A live audio Webcast of the presentation will be available on the MoSys website at A replay will be available shortly after the end of the presentation.


Founded in 1991, MoSys, Inc. (NASDAQ:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 100 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at

CONTACT: MoSys, Sunnyvale
Jim Pekarsky, CFO, +1 408-731-1846
Shelton Group
Investor Relations:
Beverly Twing, +1 972-239-5119 x 126

SOURCE: MoSys, Inc.