MoSys to Announce Second Quarter 2006 Financial Results


SUNNYVALE, Calif.--(BUSINESS WIRE)--July 17, 2006--MoSys, Inc., (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP), today announced it would release its second quarter 2006 results for the period ending June 30, 2006 on Wednesday, August 2, 2006 after the market closes. Following the release, the Company will host a live audio Web cast and conference call at 4:30 p.m. Eastern Time (1:30 p.m. Pacific Time).

Second Quarter Web Cast/Conference Call

To access the call, please dial 866-713-8566 and enter the pass code 55260961 at least 10 minutes prior to the start of the call.

Date: Wednesday, August 2, 2006
Time: 4:30 p.m. Eastern Time (1:30 p.m. Pacific Time)
Conference Call Number: 866-713-8566
International Callers: 617-597-5325
Pass Code: 55260961

The conference call replay will be available for 48 hours beginning two hours after the call. The replay number is 888-286-8010 with a pass code of 63191049. International callers should dial 617-801-6888 and enter the same pass code at the prompt.

In addition, the live audio conference call and replay will be available on the investor relations section of the company's Web site at http://www.mosys.com.

About MoSys, Inc.

Founded in 1991, MoSys, Inc. (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' Web site at http://www.mosys.com.

CONTACT: MoSys
Jim Pekarsky, 408-731-1800
jimp@mosys.com
or
Shelton IR
Beverly Twing, 972-239-5119 x126
btwing@sheltongroup.com

SOURCE: MoSys, Inc.