MoSys' 1T-SRAM(R) Classic Macros Family Wins DesignCon DesignVision Award for Best IP Technology; Program Honors Unique Technologies Providing Substantial Benefits to the Semiconductor Industry

SUNNYVALE, Calif.--(BUSINESS WIRE)--Feb. 8, 2006--MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, announced today that its 1T-SRAM(R) CLASSIC Macros family has won the DesignCon DesignVision Award for best semiconductor and IC intellectual property technology. The DesignVision Awards program recognizes technologies, applications, products, and services judged to be the most unique and beneficial to the industry.

"The DesignVision Awards recognize innovative products and services that support the work of electronic design engineers, the core audience at DesignCon," said Dr. Barry Sullivan, DesignCon 2006 Program Director. "The IEC is pleased to provide this recognition to companies whose products exemplify our standard of service to the industry."

The MoSys 1T-SRAM CLASSIC memory macros are a family of silicon proven, pre-configured high-density embedded memory products aimed at easy integration in System-on-Chip (SoC) designs. These macros allow the designer to take advantage of the time to market and cost savings of an off-the-shelf IP product. CLASSIC 1T-SRAM macros are optimized for leading ASIC and pure-play foundry manufacturing processes and are available in high-speed or low-power options.

"We are thrilled that our 1T-SRAM CLASSIC Macros family has received this important recognition," said Chet Silvestri, CEO of MoSys, Inc. "We will continue to deliver innovative products to meet the evolving needs of our customer base. The CLASSIC Macros family, introduced in June 2005, has been a major success for us and we will continue to deliver industry-leading IP products that set the benchmark for excellence."

Silvestri accepted the award on behalf of MoSys at a ceremony on Tuesday, February 7, 2006, held at the DesignCon event in Santa Clara, C.A.

For additional information about the DesignCon DesignVision Awards program and a complete list of winners, please visit For additional information about MoSys' 1T-SRAM CLASSIC Marcos family, please visit


Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at

CONTACT: MoSys, Inc.
Walter Croce, 408-731-1820
Shelton PR
Katie Olivier, 972-239-5119, Ext. 128

SOURCE: MoSys, Inc.