Monolithic System Technology to Present at the Eighth Annual Needham Growth Conference


SUNNYVALE, Calif.--(BUSINESS WIRE)--Jan. 4, 2006--MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, today announced that Chet Silvestri, Chief Executive Officer, will be presenting at The Eighth Annual Needham Growth Conference at the New York Palace Hotel on Wednesday, January 11, 2006 at 3:30 p.m. EST. Mr. Silvestri will be addressing key technology investors regarding the Company's operations and technology.

A live audio Webcast of the presentation may be accessed on the MoSys website at http://www.mosys.com. A replay will be available approximately 10 minutes after the end of the presentation.

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

CONTACT: MoSys, Sunnyvale
Chet Silvestri, 408-731-1811
chet@mosys.com
or
Shelton Investor Relations, Dallas
Investor Relations
Beverly Twing, 972-239-5119 x 126
btwing@sheltongroup.com

SOURCE: MoSys, Inc.