MoSys and Open-Silicon Pound Tharas Systems Design Into Production; Tharas Systems Hammer(R) Verification Appliances Powered by Large Number of High-Speed 1T-SRAM Memory

SUNNYVALE, Calif.--(BUSINESS WIRE)--Dec. 20, 2005--MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, and Open-Silicon, Inc., a fabless ASIC company that provides a predictable, reliable and cost-effective alternative to traditional chip design and supply-chain models announced today the silicon validation of MoSys' 1T-SRAM(R) high-density, high-performance embedded memory technology within Tharas Systems' Hammer S-Class and M-Class family of verification appliances. The custom multi-core device is now in volume production on TSMC's 0.13-micron silicon process using 1T-SRAM(R) technology for its embedded memory.

"To satisfy market needs we required high integration of simultaneously switching memory," says Subbu Ganesan, director, co-founder and CTO of Tharas Systems. "The trade-off analysis and high integration from Open-Silicon's IP team combined with the strong engineering support that MoSys provided allowed us to maximize the price/performance of our hardware-assisted verification solutions and delivered first-time working silicon on schedule."

"Complex designs like Tharas Systems' multi-core custom processor are becoming more common, and our customers are requiring higher densities of embedded memory," expressed Rajesh Shah, director of engineering and IP at Open-Silicon. "MoSys 1T-SRAM highly reliable embedded memory products are a valuable component in Open-Silicon's portfolio of silicon proven IP.

"Tharas Systems is a leader in plug-and-play simulation acceleration solutions and we are thrilled that they have effectively moved into production with our embedded memory technology," mentioned Chet Silvestri, CEO of MoSys. "The success of this joint program with Open-Silicon demonstrates how teamwork plays an important role our company's long term winning relationship."

About Mosys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at

About Open-Silicon, Inc.

Open-Silicon, Inc. is a fabless ASIC company delivering the most cost-effective, predictable and reliable custom ASIC solution to electronics product customers worldwide. Open-Silicon's OpenMODEL is the semiconductor industry's first end-to-end custom ASIC solution based on a revolutionary business model that provides a seamless, low-cost, low risk alternative to traditional models for complex ASIC design and development. For more information, visit Open-Silicon's website at or call 408-523-1200.