Mosys 1T-SRAM(R) Selected as Pixim(R) D2500 Video Imaging System's Embedded Memory Solution; Multi-Megabit Embedded Memory, High-Quality Digital Video Chipset Reaches Volume Production


SUNNYVALE, Calif.--(BUSINESS WIRE)--Nov. 28, 2005--MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions announced today the silicon validation of MoSys' 1T-SRAM(R) embedded memory technology within Pixim's latest D2500 Video Imaging System chipset. The digital image sensor and processor devices have been in volume production since June/2005. The image processor device is manufactured using MoSys's 1T-Q(R) advanced bit cell technology for its embedded memory on TSMC's 0.13-micron standard CMOS process.

"To deliver the superior wide dynamic range performance and image quality of our products, Pixim utilizes a number of technology innovations," said Ricardo Motta, Chief Technology Officer & Vice President of Imaging Systems at Pixim, Inc. "MoSys' 1T-SRAM high density, high performance embedded memory is a key component to enable us to achieve these high standards with very low power dissipation."

"Digital imaging applications are an ideal fit for MoSys' 1T-SRAM embedded memory technology, and our multiple successful programs with Pixim, a leading provider of digital imaging products, are a tangible proof of that," mentioned Chet Silvestri, Chief Executive Officer of MoSys. "With our 1T-SRAM, Pixim was able to achieve considerable die area savings, affording the company the opportunity to embed larger amounts of RAM and corresponding features into this highly successful product and providing a significant competitive advantage."

ABOUT MOSYS, INC.

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

About Pixim

Pixim Inc. has developed imaging technology and products that revolutionize the way video cameras capture and process images. Pixim's patented Digital Pixel System(R) (DPS) silicon and software technology produces superior pictures under a wide variety of lighting conditions. For more information, please visit Pixim at http://www.pixim.com.

CONTACT: MoSys Inc.
Walter Croce, 408-731-1820
wcroce@mosys.com
or
Pixim Inc.
John Monti, 650-605-1107
monti@pixim.com
or
Shelton PR
Katie Olivier, 972-239-5119 x128
kolivier@sheltongroup.com

SOURCE: MoSys Inc.