SUNNYVALE, Calif.--(BUSINESS WIRE)--Oct. 18, 2005--Monolithic System Technology, Inc. (MoSys), (Nasdaq:MOSY) the industry's leading provider of high density SoC embedded memory solutions, announced today that Dhaval Ajmera has joined MoSys in the position of vice president of worldwide sales and business development. Dhaval's responsibilities will include the licensing of MoSys' embedded macro technology, the launch and execution of the company's patent licensing program, 3rd-party partnerships and merger and acquisitions activities.
Dhaval brings to MoSys more than 23 years executive management experience in engineering, sales, marketing and business development at companies including AMD, National Semiconductor, Sun Microsystems, Emuzed and CEVA. He has extensive experience in technology licensing and has successfully negotiated very large, complex licenses with major companies. Most recently he was at CEVA where he was the vice president of North American Sales and under his direction grew sales significantly.
"I am confident that Dhaval will be a great addition to our company," said Chet Silvestri, CEO of MoSys. "Dhaval brings a wealth of experience and measurable success to help us in achieving our short and long term goals."
"I am thrilled with the opportunity to join MoSys," expressed Dhaval Ajmera. "MoSys' 1T-SRAM(R) technology is the only viable choice for making high volume, cost effective SoCs, creating a paradigm shift in the marketplace."
About MoSys, Inc.
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.