MoSys(R) 1T-SRAM(R) IP Unbounds Azul Systems(R) Network Attached Processing Compute Appliances; MoSys 1T-SRAM(R) Embedded in Volume Production Vega(TM) Multiprocessor Chips

SUNNYVALE, Calif.--(BUSINESS WIRE)--Oct. 11, 2005--MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, announced today the silicon validation of MoSys' 1T-SRAM(R) high-density, high-performance embedded memory technology within Azul System's Vega multiprocessor. The device is now in volume production using 1T-SRAM(R) technology for its embedded memory.

"Azul Compute Appliances are designed to meet today's requirements for a highly-reliable, on demand compute resource," says Scott Sellers, vice president of hardware engineering and CTO at Azul Systems. "We chose MoSys' 1T-SRAM embedded memory technology with redundancy, built-in error checking and error correction features along with its high-performance capabilities which allow our products to deliver the enterprise class reliability, availability, and serviceability needs of our customers."

"Azul Systems is a recognized industry leader in the emerging networked attached processing market and we are very pleased that they have selected 1T-SRAM technology for their embedded high-density memory needs," said Chet Silvestri, chief executive officer of MoSys. "By meeting their demanding reliability and performance requirements, MoSys sets a very high standard in providing memory products addressing mission critical, yet affordable system solutions."

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at

CONTACT: MoSys, Inc., Sunnyvale
Walter Croce, 408-731-1820
Shelton PR, Dallas
Katie Olivier, 972-239-5119 x128

SOURCE: MoSys, Inc.