MoSys Inc. Announces Licensing Agreement with LG Electronics; Targets High-Density Embedded Memory Products for High-Volume Consumer Applications

SUNNYVALE, Calif.--(BUSINESS WIRE)--Sept. 26, 2005--MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions announced today the licensing of MoSys' 1T-SRAM(R) high-density embedded memory technology by LG Electronics for high-volume consumer electronic applications.

"The benefits of 1T-SRAM based products are obvious," says Heesub Lee, vice president of engineering at LG Electronics. "By delivering an optimum combination of density, speed and power dissipation MoSys' embedded memories allow LG Electronics to maintain our consumer products in a leadership position in terms of performance, quality and cost advantages."

"LG Electronics is a powerhouse in consumer electronics and cellular handsets," said Chet Silvestri, Chief Executive Officer of MoSys, Inc. "And we are very pleased that they have chosen our 1T-SRAM technology for their consumer electronic applications."


Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 90 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at

CONTACT: MoSys, Sunnyvale
Walter Croce, 408-731-1820
Shelton PR
Katie Olivier, 972-239-5119 x128

SOURCE: MoSys, Inc.