MoSys Unveils Its 1T-SRAM ``CLASSIC Macro'' Family; Available on TSMC, Chartered, and SMIC 0.13micron Processes

SUNNYVALE, Calif., Jun 13, 2005 (BUSINESS WIRE) -- MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions announced today the availability of 1T-SRAM(R) "CLASSIC Memory Macros" - a family of pre-configured, high density, high speed, low power memory macros using silicon-proven 0.13 micron cores. By offering this set of macros in addition to its custom-designed embedded memory products, MoSys' customers now have the advantage of off-the-shelf, silicon-proven 1T-SRAM memory for rapid integration of high-density embedded memory into their SoC designs.

MoSys' CLASSIC Macros are available in both high speed and low power configurations, targeted at applications including performance computing, high-throughput data networking, portable mass storage as well as high volume consumer entertainment and wireless personal communications. High speed CLASSIC macros are available in 1 Megabit configurations with 32bit, 64bit or 128bit bus widths. Speeds of up to 266 MHz are supported. The low-power CLASSIC macros are available in 1Megabit, 2Megabit or 4 Megabit configurations, all with 32-bit bus widths. The low power offerings can operate at frequencies up to 133 MHz and feature standby power of less than 80 micro Amps per Megabit. All CLASSIC macros employ MoSys' patented TEC(R) technology resulting in higher yields, greater reliability and lower soft-error rates.

"Since its introduction, MoSys' 1T-SRAM technology has enabled designers to achieve significant performance advantages and cost savings," said Karen Lamar, vice president of sales and marketing at MoSys. "By taking advantage of MoSys' pre-configured CLASSIC macro offerings, our customers now enjoy shorter design cycles and reduced development costs, while still retaining all of the performance benefits they have come to expect when using MoSys' technology."

MoSys' CLASSIC macros are licensed on single project use basis, while allowing customers to use multiple instances in their designs to achieve larger on-chip memory sizes. CLASSIC macros are targeted for use with multiple foundries including Chartered, SMIC and TSMC, initially on the 0.13-micron process node. CLASSIC macro deliverables include datasheets, simulation and timing models, layout phantoms, GDSII databases and test documentation.

"With the new CLASSIC macros line, MoSys is offering its customers immediate access to the best combination of high-density, configurable bandwidth and low power in an embedded SRAM memory solution. Through use of its proprietary 1T-Q (single transistor, quad density) bit cell instantiated in CLASSIC pre-configured macros, MoSys delivers truly compelling embedded SRAM memory solutions for immediate use as a drop-in replacement for larger, less-power optimized embedded SRAMs. With CLASSIC macros onboard their consumer and communications SoCs, MoSys' customers greatly accelerate their time to market while saving engineering development costs, particularly for SoC designs with increasingly aggressive market windows," said Rich Wawrzyniak, senior ASICs & SoC analyst with Semico Research. "MoSys' CLASSIC macros family greatly benefits fabless companies that do not have the capital resources or longer SoC design windows required to invest in a fully customizable 1T-SRAM solution. CLASSIC macros enable MoSys' customers to get the best bang for their buck by getting to market faster with optimal performance and significant cost savings."

For customers with embedded memory requirements outside the scope of the CLASSIC macros, including projects in advanced deep sub-micron processes such as 90 nanometers, MoSys continues to provide its customized embedded 1T-SRAM memory macros.

Price and Availability

MoSys 0.13-micron 1T-SRAM CLASSIC macros are available now with pricing on request. Silicon characterization reports will be available by September 2005.


Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 80 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at


This press release may contain forward-looking statements about the Company including, without limitation, benefits and performance expected from use of the Company's 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and expectations of future events that are subject to risks and uncertainties. Actual results and trends may differ materially from historical results or those projected in any such forward-looking statements depending on a variety of factors. These factors include but are not limited to, customer acceptance of our 1T-SRAM technologies, the timing and nature of customer requests for our services under existing license agreements, the timing of customer acceptance of our work under such agreements, the level of commercial success of licensees' products such as cell phone hand sets, ease of manufacturing and yields of devices incorporating our 1T-SRAM, our ability to enhance the 1T-SRAM technology or develop new technologies, the level of intellectual property protection provided by our patents, the vigor and growth of markets served by our licensees and customers and operations of the Company and other risks identified in the Company's most recent annual report on Form 10-K filed with the Securities and Exchange Commission, as well as other reports that MoSys files from time to time with the Securities and Exchange Commission. MoSys undertakes no obligation to update publicly any forward-looking statement for any reason, except as required by law, even as new information becomes available or other events occur in the future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

SOURCE: MoSys, Inc.

MoSys, Inc., Sunnyvale
Walter Croce, 408-731-1820
Shelton PR, Dallas
Katie Olivier, 972-239-5119 x128