SUNNYVALE, Calif.--(BUSINESS WIRE)--April 25, 2005--MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions announced today the extension of the existing partnership with Fujitsu Limited to incorporate MoSys' 1T-SRAM(R) technology into high volume semiconductor devices for portable consumer applications manufactured on Fujitsu's 90nm process generation.
"We are very impressed with MoSys' embedded memory IP," said Kimiaki Satoh, general manager of the FCRAM Division at Fujitsu Limited. "We now look to offer the same robust memory capabilities on Fujitsu's most advanced 90nm process, following our 130nm process. By offering both 1T-SRAM embedded macros design and wafer foundry services, we will provide our customers with first class ASIC capabilities and the highest quality in the industry."
"We are pleased to strengthen our relationship with Fujitsu and are proud to be their high-density embedded memory technology supplier of choice at 90nm," said Karen Lamar, vice president of Sales and Marketing at MoSys, Inc. "By combining our unique memory architecture and advanced 1T-Q(R) bit cell with Fujitsu's advanced 90nm logic process, designers of complex ASIC/SoC devices will have access to optimal combination of high density, low power dissipating and high performing solutions for their embedded memory needs."
"The contribution of MoSys' 1T-SRAM 130nm at Fujitsu was key for this new joint program targeting 90nm," added Gerry Shimauchi, MoSys International's Japan Country Manager. "By having 1T-SRAM capabilities available at their two most advanced process generations, Fujitsu offers a smooth migration path to their customer's ever more complex system requirements. We look forward to a successful and long-term relationship with Fujitsu."
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 80 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
This press release may contain forward-looking statements about the Company including, without limitation, benefits and performance expected from use of the Company's 1T-SRAM technology.
Forward-looking statements are based on certain assumptions and expectations of future events that are subject to risks and uncertainties. Actual results and trends may differ materially from historical results or those projected in any such forward-looking statements depending on a variety of factors. These factors include but are not limited to, customer acceptance of our 1T-SRAM technologies, the timing and nature of customer requests for our services under existing license agreements, the timing of customer acceptance of our work under such agreements, the level of commercial success of licensees' products such as cell phone hand sets, ease of manufacturing and yields of devices incorporating our 1T-SRAM, our ability to enhance the 1T-SRAM technology or develop new technologies, the level of intellectual property protection provided by our patents, the vigor and growth of markets served by our licensees and customers and operations of the Company and other risks identified in the Company's most recent annual report on Form 10-K filed with the Securities and Exchange Commission, as well as other reports that MoSys files from time to time with the Securities and Exchange Commission. MoSys undertakes no obligation to update publicly any forward-looking statement for any reason, except as required by law, even as new information becomes available or other events occur in the future.
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
CONTACT: MoSys, Sunnyvale
Walter Croce, 408-731-1820
Shelton PR, Dallas
Katie Olivier, 972-239-5119 x128
SOURCE: MoSys, Inc.