Monolithic System Technology to Present at B. Riley & Co. Annual Investor Conference


SUNNYVALE, Calif., Mar 07, 2005 (BUSINESS WIRE) -- MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high density SoC embedded memory solutions, today announced that Mark Voll, Vice President of Finance and Administration, Chief Financial Officer will be presenting at The B. Riley & Co. Annual Investor Conference to be held at the Venetian Resort Hotel Casino in Las Vegas on March 18, 2005. Mr. Voll will be addressing key technology investors regarding the Company's operations and technology.

The live audio Web broadcast of the presentation can be accessed through the investor section of the MoSys Web site at www.Mosys.com. A replay of the presentation also will be available on the site for 30 days.

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 80 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. Nintendo GameCube is a trademark of Nintendo. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

SOURCE: MoSys, Inc.

MoSys, Inc., Sunnyvale
Mark Voll, 408-731-1846
markv@mosys.com
or
Investor Relations:
Shelton Investor Relations, Dallas
Beverly Twing, 972-239-5119 x 126
btwing@sheltongroup.com