K-Micro Customers Can Use MoSys' Memory Technology for High-Density, Low-Power ASICs
SAN JOSE, Calif.--(BUSINESS WIRE)--Nov. 29, 2004-- K-Micro (Kawasaki Microelectronics) a leader in advanced yet affordable ASICs, and MoSys, Inc. (Nasdaq:MOSY) the industry's leading provider of high-density system on chip (SoC) embedded memory solutions, today announced a licensing agreement that will add MoSys' 1T-SRAM(R) embedded memory technology to K-Micro's ASIC intellectual property (IP) portfolio.
"Adding MoSys' 1T-SRAM technologies to our IP portfolio offers our customers an excellent high-density and low power embedded memory solution for SoCs for cost-sensitive products such as digital cameras, set-top boxes, digital TVs, and fiber-to-the-premises (FTTP) equipment," said Sunil Baliga, vice president of marketing and business development for K-Micro. "Our customers who want to use MoSys' 1T-SRAM technology can do so without having to negotiate a license agreement with MoSys, thus making it easier for them to use it and speeding up their time-to-market."
"We are pleased to partner with K-Micro by including 1T-SRAM technology in the K-Micro IP library. The addition of 1T-SRAM will further K-Micro's position as a leader in advanced yet affordable ASICs," commented Karen Lamar, vice president of sales and marketing at MoSys.
"MoSys 1T-SRAM technologies have been silicon-proven in six process generations and are in volume production in many consumer and communications products. Our partnership with K-Micro expands the growing list of leading semiconductor companies that have aligned with MoSys to develop high-quality integrated circuits with proven benefits in cost-sensitive product designs. We are pleased to partner with K-Micro beginning with its 0.13-micron logic process and plan to extend our relationship with them for future advanced process generations," added Gerry Shimauchi, MoSys' Japan country manager.
About K-Micro (Kawasaki Microelectronics)
K-Micro is the leader in advanced yet affordable ASIC semiconductor technology solutions. The company's innovative core technologies and world-class design support are used in the consumer electronics, computer, office-automation, and networking markets. The company is an active participant in industry standards organizations, including the Wi-Fi Alliance, Network Processing Forum (NPF), Optical Internetworking Forum (OIF), PCI Special Interest Group (PCI-SIG), USB Implementers Forum, MPEG Industry Forum (MPEGIF), Mobile Computing Promotion Consortium (MCPC), the Digital Display Working Group (DDWG), SD Card Association (SDA) and OCP International Partnership (OCP-IP). K-Micro has design centers in Boston, San Jose, Taipei, and Tokyo. For more information, contact the company at 408-570-0555, or visit http://www.k-micro.us/.
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, 1T-SRAM technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 80 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, Calif. 94085. More information is available on MoSys' website at http://www.mosys.com.
Note for Editors:
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
SOURCE: MoSys, Inc.