Monolithic System Technology to Speak at 2004 AeA Classic Financial Conference


SUNNYVALE, Calif., Nov. 4 /PRNewswire-FirstCall/ -- MoSys, Inc. (Nasdaq: MOSY), the industry's leading provider of high density SoC embedded memory solutions, today announced that Dr. Fu-Chieh Hsu, President and Chief Executive Officer, and Mark Voll, Vice President of Finance and Administration and Chief Financial Officer, will be presenting at The AEA Classic Financial Conference at the Hyatt Regency Hotel in Monterey, California on November 9 and 10 in room #1459. Dr. Hsu and Mr. Voll will be addressing key technology investors regarding the Company's operations and technology.

This presentation is being webcast live by CCBN on November 10 at 12:00 P.M. P.T. and can be accessed at MoSys web site at www.mosys.com. A replay will be available approximately 1 hour after the end of the presentation.

The webcast is also being distributed over CCBN's Investor Distribution Network to both institutional and individual investors. Individual investors can listen to the call through CCBN's individual investor center at www.fulldisclosure.com or by visiting any of the investor sites in CCBN's Individual Investor Network. Institutional investors can access the call via CCBN's password-protected event management site, StreetEvents (www.streetevents.com).

ABOUT MOSYS

Founded in 1991, MoSys, develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 65 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

NOTE: 1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. Nintendo GameCube is a trademark of Nintendo. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

SOURCE Monolithic System Technology, Inc. 11/04/2004
CONTACT: Mark Voll, CFO of MoSys, +1-408-731-1846
Web site: http://www.mosys.com