MoSys Licenses 1T-SRAM-R Embedded Memory to Open-Silicon

Delivers low power, superior reliability and ultimate density for high-performance ASIC applications using 0.13-micron standard logic process

SUNNYVALE, Calif.--(BUSINESS WIRE)--July 6, 2004-- MoSys, Inc. (Nasdaq:MOSY) the leading provider of high-density SoC embedded memory solutions and Open-Silicon, Inc., a fabless ASIC company that provides a predictable, reliable and cost effective alternative to traditional chip design and supply chain models, today announced the licensing of 1T-SRAM(R)-R(TM) embedded memory technology to Open-Silicon. MoSys' patented technology will enable Open-Silicon to provide its customers with high quality ASICs containing embedded memory, which will be fabricated in a standard logic process. The 1T-SRAM-R technology has been proven to dramatically reduce soft error rates (SERs) to fewer than 10 FIT/Mb in 0.13-micron process technology resulting in improved system-level reliability at a low cost while still maintaining the simple, industry-standard SRAM interface.

"MoSys' 1T-SRAM-R memory, including it's patented Transparent Error Correction(TM) (TEC(TM)) technology, provides a valuable solution for embedding large high-performance, low-power memories cost-effectively into SoC designs," said Rajesh Shah, Director of Engineering and IP at Open-Silicon. "1T-SRAM-R memory technology in collaboration with our OpenMODEL(TM) concept addresses our customer's growing need to make intelligent and informed choices that lower cost and reduce risk at each step of the ASIC implementation."

Open-Silicon joins a long and growing list of world-class MoSys-licensed companies who are using 1T-SRAM-R in a wide range of applications that require cost savings combined with the highest levels of quality, reliability and low power.

"We are very pleased to add Open-Silicon to our list of leading companies that have licensed our 1T-SRAM memory technology," said Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. "As the proportion of integrated circuit die area occupied by embedded memory continues to grow, selection of the correct memory technology becomes one of the key decisions for IC designers. By choosing our 1T-SRAM-R embedded memory, Open-Silicon and their customers will take advantage of the industry's highest quality, lowest cost, embedded memory solution."


Open-Silicon, Inc. is a fabless ASIC company delivering the most cost-effective, predictable and reliable custom ASIC solution to electronics product customers worldwide. Open-Silicon's OpenMODEL(TM) is the semiconductor industry's first end-to-end custom ASIC solution based on a revolutionary business model that provides a seamless, low-cost, low risk alternative to traditional models for complex ASIC design and development. For more information, visit Open-Silicon's website at or call 408-523-1200.


Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys' licensees as well as in MoSys' standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

CONTACT: MoSys, Sunnyvale
Public Relations
K.T. Boyle, 408-731-1830
Open Silicon Inc., Sunnyvale
Darwa Peterson, 408-328-8366

SOURCE: MoSys, Inc.