Monolithic System Technology, Inc. First Quarter Earnings Conference Call


SUNNYVALE, Calif.--(BUSINESS WIRE)--May 5, 2004--Monolithic System Technology, Inc. (MoSys), (NASDAQ:MOSY) will release its first quarter 2004 results for the period ending March 31, 2004 on Thursday, May 6, 2004, after the market closes. Following the release, the Company will host a live audio Web cast and conference call at 5:15 p.m. Eastern Time.

This call is being webcast by CCBN and can be accessed at MoSys' web site at www.mosys.com.

The webcast is also being distributed over CCBN's Investor Distribution Network to both institutional and individual investors. Individual investors can listen to the call through CCBN's individual investor center at www.companyboardroom.com or by visiting any of the investor sites in CCBN's Individual Investor Network. Institutional investors can access the call via CCBN's password-protected event management site, StreetEvents (www.streetevents.com).

ABOUT MOSYS AND 1T-SRAM

Founded in 1991, MoSys (NASDAQ:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

CONTACT: Shelton IR
Beverly Twing, 972-239-5119 ext. 126
btwing@sheltongroup.com

SOURCE: Monolithic System Technology, Inc.