Monolithic System Technology, Inc. Announces Revised Date of First Quarter Conference Call

SUNNYVALE, Calif., Apr 30, 2004 (BUSINESS WIRE) -- Monolithic System Technology, Inc. (MoSys) (Nasdaq:MOSY) announces that it will release its first quarter financial results for the period ending March 31, 2004, on Thursday, May 6, after the market closes. Following the release, the Company will host a live audio webcast and conference call at 5:15 p.m. Eastern Time.

President and Chief Executive Officer Fu-Chieh Hsu and Chief Financial Officer Mark Voll will discuss the company's earnings and operations on the call. Investors and other interested parties may listen to the live webcast by visiting the investor relations section of the MoSys Web site at A webcast replay will also be available on the company's Web site.


Founded in 1991, MoSys (Nasdaq:MOSY) develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' Web site at

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

SOURCE: Monolithic System Technology, Inc.

MoSys, Sunnyvale
Mark Voll, 408-731-1846
Shelton IR
Beverly Twing, 972-239-5119, ext. 126