MoSys' 1T-SRAM-Q Technology Verified on UMC'S 0.13-Micron Logic Process; Foundry's Customers Can Now Access MoSys' Newest High-Density Embedded Memory Technology

SUNNYVALE, Calif. & HSINCHU, Taiwan--(BUSINESS WIRE)--April 5, 2004--MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high density embedded memory solutions, and UMC (NYSE:UMC), a world leading semiconductor foundry, today announced the successful silicon validation of MoSys' 1T-SRAM-Q(TM) (quad density) embedded memory technology on UMC's 0.13-micron logic process. This extends the existing cooperation between the companies, as an additional optimized high-density memory solution is available to UMC's foundry customers. MoSys' 1T-SRAM-R was silicon verified on UMC's 0.13-micron process in January 2003.

"MoSys' 1T-SRAM-Q technology expands the portfolio of advanced solutions that UMC provides to customers," said Ken Liou, director of the Design Support division at UMC. "The high-density 1T-SRAM-Q embedded memory technology offers greater flexibility for our customers designing complex SoC products with robust memory requirements."

1T-SRAM-Q technology enables designers to embed even larger high-performance memories and incorporates MoSys' proprietary Transparent Error Correction(TM) (TEC(TM)) technology, delivering the additional benefits of improved yield and reliability with elimination of laser repair and soft error concerns. 1T-SRAM-Q is based on MoSys' patented Folded Area Capacitor(TM) (FAC(TM)) technology which reduces bit cell size by folding the bit cell gate oxide capacitor vertically down the STI sidewall, decreasing the horizontal area. This results in typical bit cell sizes of 0.5 squared microns for the 0.13-micron process node.

"We are pleased to expand our relationship with UMC, a top-tier foundry," said Mark Eric Jones, vice president and general manager of Intellectual Property at MoSys. "The silicon validation of 1T-SRAM-Q on UMC's 0.13-micron process expands the options for UMC's foundry customers requiring integration from one to a large number of high-performance SRAM megabits in their SoCs."

The silicon report is available from MoSys.

About UMC

UMC (NYSE:UMC)(TSE:2303) is a leading global semiconductor foundry that manufactures advanced process ICs for applications spanning every major sector of the semiconductor industry. UMC delivers cutting-edge foundry technologies that enable sophisticated system-on-chip (SOC) designs, including 90nm copper, 0.13um copper, embedded DRAM, and mixed signal/RFCMOS. UMC is also a leader in 300mm manufacturing; Fab 12A in Taiwan is currently in volume production for a variety of customer products, while Singapore-based UMCi has just entered volume production. UMC employs over 8,500 people worldwide and has offices in Taiwan, Japan, Singapore, Europe, and the United States. UMC can be found on the web at

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, Calif. 94085. More information is available on MoSys' website at

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

CONTACT: MoSys, Sunnyvale
K.T. Boyle, 408-731-1830
Shelton PR for MoSys, Dallas
Katie Olivier, 972-239-5119 ext. 128
KJ Communications for UMC
Eileen Elam, 650-917-1488
UMC, Taiwan
Alex Hinnawi, (886) -2-2700-6999 ext. 6958

SOURCE: MoSys, Inc.