SUNNYVALE, Calif., Jan 20, 2004 (BUSINESS WIRE) -- Virtual Silicon, Inc., a leader in semiconductor intellectual property (SIP), and MoSys, Inc. (Nasdaq:MOSY) the industry's leading provider of high density system-on-chip (SoC) embedded memory solutions, today announced the formation of a partnership to collectively offer a comprehensive low power IP solution for TSMC's 130nm processes. Virtual Silicon will contribute VIP(TM) PowerSaver standard cells, interface IP (basic I/O, application specific I/O and PLL) and power management IP. MoSys will add its new low-power, single-port and dual-port 6T-SRAM-R(TM) compiled memories as well as MoSys' high-density, low-power 1T-SRAM-M(TM) memory technology.
"Virtual Silicon's strategic focus is to enable SoC designers to solve the crisis of power at 130 and 90nm," said Barry A. Hoberman, president and CEO of Virtual Silicon. "Teaming up with MoSys on this mission for memory means the customer is getting an integrated solution from the best in class IP providers."
"MoSys is addressing the requirements of SoC designers to reduce power consumption in the latest generation processes while minimizing chip cost with our innovative 1T-SRAM-M and 6T-SRAM-R memory technologies," said Dr. Fu-Chieh Hsu, president and CEO of MoSys. "We are pleased to partner with Virtual Silicon to offer customers a complete power-optimized foundation IP solution."
This partnership also complements the power-saving efforts of National Semiconductor which has developed low power technology mobile electronic applications, including handsets. "Our PowerWise(TM) technology is enabling SoC designers to greatly extend the battery life of portable devices," said Peter Henry, vice president of portable power systems, National Semiconductor. "The combined capabilities of MoSys and Virtual Silicon's power management IP, which is compatible with National's PowerWise technology, places a powerful tool in the hands of SoC designers."
About Virtual Silicon Technology
Virtual Silicon is a leading supplier of semiconductor intellectual property technology to manufacturers and designers of complex systems-on-chip (SoC). Headquartered in Sunnyvale, CA, the company provides process-specific embedded components that serve the wireless, networking, graphics, communication and computing markets. Customers include leading fabless semiconductor companies, integrated semiconductor manufacturers, foundries, and SoC developers who demand leading edge technology for their semiconductor innovations. For more information, call 408-548-2700 or visit Virtual Silicon online at www.virtual-silicon.com.
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes.
1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
Note to Editors: 1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
Your Source for IP, VIP, Silicon Ready, The Heart of Great Silicon and Virtual Silicon are trademarks of Virtual Silicon Technology, Inc.
SOURCE: Virtual Silicon