SUNNYVALE, Calif.--(BUSINESS WIRE)--Dec. 9, 2002--MoSys, Inc. (NASDAQ:MOSY), a leading provider of high density SoC embedded memory solutions, today announced the availability of its first 1T-SRAM(R) memory compiler for TSMC and UMC 0.15-micron logic processes. The compiler is a result of the combination of MoSys' embedded memory and advanced technology obtained through the acquisition of ATMOS Corporation earlier this year. The MoSys memory compiler is web-accessible and automatically generates a wide variety of design views for MoSys' 1T-SRAM memory, enabling design engineers to easily and rapidly evaluate different memory configurations in their designs.
"The 1T-SRAM memory compiler combines proven expertise in high-density memory compilers and industry leading 1T-SRAM technology while also offering users the convenience of a Web-based tool," stated Wlodek Kurjanowicz, MoSys fellow. "The 0.15-micron 1T-SRAM compiler is available to engineers wanting to incorporate 1T-SRAM macros into their SOC designs today. In addition, the Company is in the advanced stage of developing a compiler for the 0.13-micron process and plans to offer compilers for smaller process nodes in the future."
Available at no charge via MoSys' Web site (http://www.mosys.com), the 1T-SRAM memory compiler gives design engineers complete control when investigating various options and benefits of using 1T-SRAM memory technology. The MoSys 1T-SRAM compiler provides design engineers with front-end design information, such as datasheets, VHDL and Verilog simulation models, as well as timing models for synthesis. The compiler also allows design engineers to include 1T-SRAM macro instances in their layout by providing interface signal connections in place and route views. Following licensing of the design, the final GDS2 database is delivered to the customer from MoSys.
Registered design engineers for the MoSys compiler can access as many configurations as necessary, to find the one that best suits their design needs. The compiler allows the user to select specifications for the design, which include: memory size and configuration (number of words and word size operating parameters, speed and temperature range), interface timing options (pipelined or flow-through read access, as well as options on write timing) and choosing deliverable options. Based on this information, all the views needed for simulation, synthesis, floor-planning and place and route of their design are generated allowing design engineers to quickly explore numerous "what if" scenarios. Following licensing of the chosen 1T-SRAM macro design, the final GDS2 database is delivered to the customer for merging into their tapeout.
"Our 1T-SRAM memory compiler is another way MoSys is enhancing customer service and making our technology more accessible to a broader range of designers. By making this tool available to engineers through the Web, we are helping them instantly determine the best possible solution for their chip design." stated Mark-Eric Jones, vice president and general manager of Intellectual Property, MoSys. "Now that embedded memory plays such a critical role in the cost and performance of most SOC designs, engineers need fast, easy access to the best memory technologies."
With the introduction of the 1T-SRAM compiler, MoSys now offers customers a choice of options in design methodologies that include compiled, full custom and off-the-shelf memory macros.
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technologies are in volume production both in SoC products at MoSys' licensees as well as in MoSys' standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' Web site at http://www.mosys.com.
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.