SUNNYVALE, Calif.--(BUSINESS WIRE)--Nov. 11, 2002-- MoSys, Inc. (Nasdaq:MOSY) the leading provider of high density SoC embedded memory solutions, today announced the licensing of MoSys' 1T-SRAM(R) embedded memory technology to Hitachi, Ltd. (NYSE:HIT), a leading global electronics company.
Under the terms of the agreement, MoSys' 1T-SRAM memory technology will be embedded in Hitachi's wide-range of semiconductor products.
"MoSys' 1T-SRAM embedded memory offers higher density and lower power consumption than other memory technologies, making it ideal for use in our wide-range of semiconductor products," said Norio Miyake, general manager, System Solution Planning Dept., Semiconductor & Integrated Circuits at Hitachi, Ltd. "MoSys' 1T-SRAM-R(TM) memory solution delivers Hitachi unique quality capabilities not found in other memory technologies. This will enable us to develop higher-quality chips, thus increasing our market leadership and continuing to provide top-of-the-line electronics."
Through this partnership, Hitachi joins a growing list of leading semiconductor companies that have aligned with MoSys to develop high-quality integrated circuits at a competitive price. "We are very pleased to add Hitachi to the list of leading companies that have licensed our 1T-SRAM memory technology," said Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys. "As the proportion of integrated circuit die area occupied by embedded memory continues to grow, selection of the correct memory technology becomes one of the key decisions for IC designers. By choosing our 1T-SRAM-R embedded memory, Hitachi and their customers will take advantage of the industry's highest quality embedded memory solution."
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys' licensees as well as in MoSys' standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
Hitachi, Ltd. (NYSE:HIT), headquartered in Tokyo, Japan, is a leading global electronics company, with approximately 320,000 employees worldwide. Fiscal 2001 (ended March 31, 2002) consolidated sales totaled 7,994 billion yen ($60.1 billion). The company offers a wide range of systems, products and services in market sectors, including information systems, electronic devices, power and industrial systems, consumer products, materials and financial services. For more information on Hitachi, please visit the company's Web site at http://global.hitachi.com.
Note for Editors:
1T-SRAM(R)is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or servicenames referenced in this release may be trademarks or registered trademarks of their respective holders.