About MoSysFounded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technology for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technologies results in the technologies achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System-on-Chip (SoC) designs. 1T-SRAM technologies are in volume production both in SoC products at MoSys' licensees as well as in MoSys' stand alone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' Web site at http://www.mosys.com.
Note for Editors:1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. Nintendo GameCube is a trademark of Nintendo. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
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