Q2 Financial Results Webcast
MoSys will host a live webcast to discuss Q2 financial results beginning at 2:15 P.M. (PT) on Thursday, July 18, 2002. Access to the webcast is provided in the MoSys website at http://www.mosys.com. The web cast will be archived on the website and available for replay afterward.
MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys' patented 1T-SRAM® technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys' licensees as well as in MoSys' standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at www.mosys.com.
Note for Editors:1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trademarks or registered trademarks are the property of their respective owners.