STEPMIND Licenses MoSys 1T-SRAM Memory Technology For Growing Wireless Networking Applications


High-speed wireless data ICs to use ultra-dense embedded memory technology

SUNNYVALE AND BOULOGNE-BILLANCOURT, FRANCE (April 11, 2002) €“MoSys, Inc. (NASDAQ: MOSY) the industry's leading provider of high density SoC embedded memory solutions and STEPMIND, a developer of GSM/GPRS/EDGE and Wireless LAN solutions, today announced the licensing of MoSys' patented 1T-SRAM memory technology for use in future generation wireless network applications incorporating high performance, high density embedded memory blocks.

€œMoSys' unique 1T-SRAM embedded memory technology offers us a combination of speed, power and cost advantages that are not matched by other embedded memory technologies,€ said Alain Jolivet, CEO at STEPMIND. €œBy using the MoSys' 1T-SRAM embedded memory, our customers will benefit from these characteristics in our future high performance data networking products.€

STEPMIND, based in France has extensive technical expertise in wireless data networks, provides added value wireless design services and is developing its own products in the EDGE, HiperLan II and IEEE 802.11a domains. The license agreement with MoSys will provide STEPMIND access to 1T-SRAM memory technology across multiple process geometries and memory configurations to be used in their future products.

€œSTEPMIND has focused on the rapidly growing market for high speed wireless data networks,€ noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. €œWe are very pleased that STEPMIND has chosen MoSys' 1T-SRAM technology for their products. Our production-proven 1T-SRAM embedded memory technology provides our licensees with cost, quality and reliability benefits to help their products achieve additional success in the marketplace.€

ABOUT MOSYS

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technology for semiconductors. MoSys' patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys' licensees as well as in MoSys' standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at www.mosys.com.

ABOUT STEPMIND

Founded in July 2000, STEPMIND operates in the field of Wireless High Speed Data. STEPMIND develops and designs integrated circuits in the field of RF transceivers and baseband according to the GSM/GPRS/EDGE, IEEE 802.11a and HiperLAN2 standards. This expanding design house will also market complete solutions, including software, for RF data link modules complying with IEEE 802.11a and HiperLAN2 wireless standards. STEPMIND is strongly capitalized and its staff of 85 is mainly composed of engineers with many years of successful technical expertise in the domain of digital wireless.

For more information, please contact Stéphane Galfré, Communication Manager. E-mail : stephane.galfre@stepmind.com WWW : stepmind.com.

Note for Editors:

1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.