MoSys Exhibits at 2011 TSMC Tech Symposium in San Jose, California


SANTA CLARA, Calif., Apr 05, 2011 (BUSINESS WIRE) -- MoSys, Inc. (NASDAQ: MOSY):

Who:

MoSys (NASDAQ: MOSY), a leading provider of differentiated, high-density memory and high-speed interface (I/O) intellectual property (IP), will be exhibiting at TSMC's 2011 Technology Symposium in San Jose, California. MoSys will be at booth 503.

What:

The TSMC 17th Annual Technology Symposium brings together the best and brightest in the global semiconductor industry. Attendees will gain knowledge on the latest trends and industry viewpoints, first-hand information on 28nm and 20nm advanced technologies, information about the newest programs that support manufacturing excellence, ideas on how to increase functionality and improve quality by selecting the best platform for your design, the most up-to-date developments in backend technology and what's new in design service integration.

When:

Tuesday, April 5, 2011
The Symposium starts with registration at 8 a.m. and ends at 5:15 p.m. with a reception immediately following.

Where:

San Jose McEnery Convention Center
150 West San Carlos Street
San Jose, CA 95110

More information is available on MoSys' website at www.mosys.com/eventCalendar.php

About MoSys, Inc.

MoSys, Inc. (NASDAQ: MOSY) is a leading architect of serial chip-to-chip communications solutions that deliver unparalleled bandwidth performance for next generation networking systems and advanced system-on-chip (SoC) designs. MoSys' Bandwidth Engine(TM) family of ICs combines the company's patented 1T-SRAM® high-density memory technology with its high-speed 10 Gigabits per second (Gbps) SerDes interface (I/O) technology. A key element of Bandwidth Engine technology is the GigaChip(TM) Interface, an open, CEI-11 compatible interface developed to enable highly efficient serial chip-to-chip communications. MoSys' IP portfolio includes SerDes IP and DDR3 PHYs that support data rates from 1 - 11 Gbps across a variety of standards. In addition, MoSys offers its flagship, patented 1T-SRAM and 1T-Flash® memory cores, which provide a combination of high-density, low power consumption, high-speed and low cost advantages for high-performance networking, computing, storage and consumer/graphics applications. MoSys IP is production-proven and has shipped in more than 325 million devices. MoSys is headquartered in Santa Clara, California. More information is available on MoSys' website at www.mosys.com.

MoSys, 1T-SRAM, 1T-Flash and Bandwidth Engine are registered trademarks of MoSys, Inc. in the US and/or other countries. The MoSys logo, GigaChip and the GigaChip logo are trademarks of MoSys, Inc. All other marks mentioned herein are the property of their respective owners.

SOURCE: MoSys, Inc.

Media Contact:
Shelton Group
Katie Olivier, 972-239-5119 x128
kolivier@sheltongroup.com
or
Corporate Contact:
MoSys, Inc.
Kristine Perham, 408-418-7670
kperham@mosys.com