MoSys Exhibits and Presents at the 47th Design Automation Conference

MoSys to Present Joint Solutions Including Technology from PLDA, CEVA and Sarance; Apache Design Solutions; and TSMC

SUNNYVALE, Calif., Jun 14, 2010 (BUSINESS WIRE) --MoSys, Inc. (NASDAQ: MOSY):


MoSys, Inc. (NASDAQ: MOSY), a leading provider of differentiated, high-density memory and high-speed interface (I/O) intellectual property (IP) is participating at the 47th Annual Design Automation Conference, DAC 2010. DAC is the world's leading technical conference and tradeshow, covering the latest trends in electronic design and design automation.

What & Where:

Visit MoSys in booth 294, TSMC Open Innovation Forum - MoSys.

David DeMaria, MoSys' Vice President of Business Operations, is presenting "MoSys and TSMC Collaborating for Innovation" in TSMC's Open Innovation Platform Partner Theater on:

Monday, June 14 from 4:30 - 4:45 p.m.
Tuesday, June 15 from 11 - 11:15 a.m.
Wednesday, June 16 from 12:30 - 12:45 p.m.

Ali Burney, Director of Marketing at MoSys, is giving three presentations at's IP Talks! stage inside their booth 521:

Monday, June 14 from 2:30 - 3 p.m. on "MoSys-PLDA PCI Express Gen. 3 Solution." Burney will be joined by Stephane Hauradou, CTO of PLDA, to jointly present this topic.

Tuesday, June 15 from 10:30 - 11:00 a.m. and 12:30 - 1 p.m. on "MoSys-CEVA SATA 3.0 Solution."

Wednesday, June 16 from 11:30 a.m. - 12 p.m. on "MoSys-Sarance 40G/100G Ethernet Solution."

MoSys' Richard Rouse, Ph.D., Distinguished Engineer, is giving a joint presentation with Apache Design Solutions in booth 535 called "ESD Validation with Silicon Results Using PathFinder" at 1 p.m. on Tuesday, June 15.

Join MoSys and on Monday June 14 from 5:00-6:00 p.m. for a complimentary cocktail hour at booth 521!


DAC 2010 takes place June 13-18, 2010 at the Anaheim Convention Center.

About MoSys, Inc.

MoSys, Inc. (NASDAQ: MOSY) develops serial chip-to-chip communications solutions that deliver unparalleled bandwidth performance for next generation networking systems and advanced system-on-chip (SoC) designs. MoSys' IP portfolio includes DDR3 PHYs and SerDes IP that support data rates from 1 - 11 Gigabits per second (Gbps) across a variety of standards. In addition, MoSys offers its flagship, patented 1T-SRAM(R) and 1T-Flash(R) memory cores, which offer a combination of high-density, low power consumption, high speed and low cost advantages for high-performance networking, computing, storage and consumer/graphics applications. MoSys IP is production-proven in more than 225 million devices. MoSys is headquartered in Sunnyvale, California. More information is available on MoSys' website at

MoSys, 1T-SRAM and 1T-Flash are registered trademarks of MoSys, Inc. The MoSys logo is a trademark of MoSys, Inc. All other trademarks mentioned herein are the intellectual property of their respective owners.

SOURCE: MoSys, Inc.

Media Contact:
Shelton Group
Katie Olivier, 972-239-5119 x128
Corporate Contact:
MoSys, Inc.
Kristine Perham, 408-731-1804