MoSys' White Paper, "Going Serial: Breaking the Billion Access Per Second Bandwidth Barrier," is Available on Light Reading's Website


SUNNYVALE, Calif., Jun 02, 2010 (BUSINESS WIRE) --MoSys, Inc. (NASDAQ: MOSY):

Who:

Michael Miller, VP of Technology Innovation & Systems Applications at MoSys, Inc. has written a white paper entitled, "Going Serial: Breaking the Billion Access Per Second Bandwidth Barrier," which is now available on Light Reading's website at: http://www.lightreading.com/library.asp?show_type=wp&view_type=browse.

MoSys, Inc. a leading provider of high bandwidth serial chip-to-chip communications solutions for next generation networking systems and advanced system-on-chip (SoC) designs.

What:

The white paper examines the I/O bottleneck and its limiting physical connection growth. Looking at solutions from a design engineering point of view, Miller reviews current trends in interconnect technology and the optimization of bandwidth. All of which look at the bigger picture and the question, can serial interfaces break the billion access per second bandwidth barrier?

Where:

MoSys' white paper is available on Light Reading's Web site at: http://www.lightreading.com/library.asp?show_type=wp&view_type=browse.

When:

The white paper is currently available through June 30, 2010 on Light Reading's website. It is also available on MoSys' Web site at http://www.mosys.com/download.php

About MoSys, Inc.

MoSys, Inc. (NASDAQ: MOSY) develops serial chip-to-chip communications solutions that deliver unparalleled bandwidth performance for next generation networking systems and advanced system-on-chip (SoC) designs. MoSys' IP portfolio includes DDR3 PHYs and SerDes IP that support data rates from 1 - 11 Gigabits per second (Gbps) across a variety of standards. In addition, MoSys offers its flagship, patented 1T-SRAM(R) and 1T-Flash(R) memory cores, which offer a combination of high-density, low power consumption, high speed and low cost advantages for high-performance networking, computing, storage and consumer/graphics applications. MoSys IP is production-proven in more than 225 million devices. MoSys is headquartered in Sunnyvale, California. More information is available on MoSys' website at http://www.mosys.com.

MoSys, 1T-SRAM and 1T-Flash are registered trademarks of MoSys, Inc. The MoSys logo is a trademark of MoSys, Inc. All other trademarks mentioned herein are the intellectual property of their respective owners.

SOURCE: MoSys, Inc.

Media Contact:
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or
Corporate Contact:
MoSys, Inc.
Kristine Perham, 408-731-1804
kperham@mosys.com