MoSys to Announce Fourth Quarter and Full Year 2009 Financial Results on February 4, 2010


SUNNYVALE, Calif., Jan 22, 2010 (BUSINESS WIRE) -- MoSys, Inc., (NASDAQ: MOSY), a leading provider of differentiated, high-density memory and high-speed interface (I/O) intellectual property (IP) for the consumer, communications, networking, storage and high-performance computing markets, today announced it would release its fourth quarter and full year 2009 financial results on Thursday, February 4, 2010, after the market closes. Following the press release, Len Perham, MoSys' President and Chief Executive Officer, and Jim Sullivan, Chief Financial Officer, will host a live audio webcast and conference call at 5:00 p.m. Eastern Time (2:00 p.m. Pacific Time).

Fourth Quarter and Full Year 2009 Conference Call / Webcast Information

To access the call, please dial 1-800-291-9234 and enter the pass code 35646811 at least 10 minutes prior to the start of the call.

Date: Thursday, February 4, 2010
Time: 5:00 p.m. Eastern Time (2:00 p.m. Pacific Time)
Conference Call Number: 1-800-291-9234
International Call Number: 1-617-614-3923
Pass Code: 35646811

The conference call replay will be available for 48 hours, beginning two hours after the call. The replay dial-in number is 1-888-286-8010, and the pass code is 87190298. International callers should dial 1-617-801-6888 and enter the same pass code at the prompt. Additionally, this conference call will be broadcast live over the Internet and can be accessed by all interested parties on the Investor Relations section of the Company's website at http://cts.businesswire.com/ct/CT?id=smartlink&url=http%3A%2F%2Fwww.mosys.com&esheet=6151251&lan=en_US&anchor=http%3A%2F%2Fwww.mosys.com&index=1&md5=fdbe055790766399436efd8a0963b569.

About MoSys, Inc.

Founded in 1991, MoSys(R) (NASDAQ: MOSY), develops, markets and licenses differentiated embedded memory and high speed parallel and serial interface IP for advanced SoC designs. MoSys' patented 1T-SRAM(R) and 1T-Flash(R) memory technologies offer a combination of high density, low power consumption, high speed and low cost advantages that are unmatched by other available memory technologies for a variety of networking, computing, storage and consumer/graphics applications. MoSys' silicon-proven interface IP portfolio includes DDR3 PHYs, as well as SerDes IP that support data rates from 1 Gigabit per second (Gbps) to 11 Gbps, across a wide range of standards, including PCI Express, XAUI, SATA and 10G KR. MoSys IP has been production-proven in more than 225 million devices.

MoSys is headquartered in Sunnyvale, California. More information is available on MoSys' website at http://cts.businesswire.com/ct/CT?id=smartlink&url=http%3A%2F%2Fwww.mosys.com&esheet=6151251&lan=en_US&anchor=www.mosys.com&index=2&md5=2adf35314a292917313238ba37d1e20d.

MoSys, 1T-SRAM and 1T-Flash are registered trademarks of MoSys, Inc. The MoSys logo is a trademark of MoSys, Inc. All other trademarks mentioned herein are the intellectual property of their respective owners.

SOURCE: MoSys, Inc.

MoSys, Inc.
Jim Sullivan, CFO, +1 408-731-1800
jsullivan@mosys.com
or
Shelton Group - Investor Relations
Beverly Twing, +1 972-239-5119 x 126
Sr. Acct. Manager
btwing@sheltongroup.com