MoSys Announces Availability of Silicon Proven 40nm DDR3 and DDR3/2 Combo PHYs with Support for Datarates up to 2133 Mbps


Proven Interoperability with Denali€™s Databahn Memory Controller Streamlines Memory Sub-System Design

SUNNYVALE, Calif.--(BUSINESS WIRE)--Nov. 30, 2009-- MoSys, Inc., a leading supplier of high-density embedded memory and high-datarate parallel and serial interface IP, today announced the availability of its silicon-proven DDR3 and DDR3/2 combo PHYs. MoSys€™ fully-integrated solution complies with the latest DFI specification and provides the physical layer (PHY) interface between the controller logic and DDR3/2 DRAM devices. The DDR3/2 PHYs can achieve datarates up to 1600Mbps in a wirebond package and 2133Mbps in flip chip packaging, making them well-suited for both high -performance and cost-sensitive designs.

€œOur high-performance memory controllers and predictable protocol verification portfolio are the industry€™s most widely used, silicon-proven solutions,€ said David Lin, Vice President of Marketing at Denali Software, Inc. €œMoSys' DDR3/2 Combo PHY extends our ability to provide best-in-class, end-to-end memory interconnect solutions to our mutual customers.€

€œDDR3 is rapidly gaining adoption as the next generation of the DDR memory interface,€ said David DeMaria, Vice President of Business Operations at MoSys. "The availability of our DDR3/2 Combo PHY and its seamless interoperability with Denali€™s Memory Controller ensures speedy time-to-market for our customers€™ chip designs."

"The high speed interface requirements for our ASICs are demanding," said Anil Mankar, Senior Vice President of VLSI Engineering for Mindspeed Technologies. €œWe selected the DDR3 solution from MoSys because it precisely met our requirements."

MoSys€™ DFI 2.1 compliant DDR 3/2 PHY product is available to chip designers using 40nm and 65nm processes. MoSys€™s DDR 3/2 Combo PHY solution is available in both wirebond and flipchip configurations. Offering a choice of 1.8V or 2.5V IO FETs, the DDR PHYs support datarates up to 2133Mbps.

About MoSys, Inc.

Founded in 1991, MoSys® (NASDAQ: MOSY), develops, markets and licenses differentiated embedded memory and high speed parallel and serial interface IP for advanced SoC designs. MoSys€™ patented 1T-SRAM® and 1T-Flash® memory technologies offer a combination of high density, low power consumption, high speed and low cost advantages that are unmatched by other available memory technologies for a variety of networking, computing, storage and consumer/graphics applications.

MoSys€™ silicon-proven interface IP portfolio includes DDR3/2 Combo PHYs, as well as SerDes IP that support data rates from 1 Gigabit per second (Gbps) to 11Gbps, across a wide range of standards, including PCI-Express, XAUI, SATA and 10G KR. MoSys IP has been production-proven in more than 190 million devices.

MoSys is headquartered in Sunnyvale, California. More information is available on MoSys' website at http://www.mosys.com.

MoSys, 1T-SRAM and 1T-Flash are registered trademarks of MoSys, Inc. All other trademarks mentioned herein are the intellectual property of their respective owners.

Source: MoSys, Inc.

MoSys, Inc.
Kristine Perham, 408-731-1804
kperham@mosys.com