MoSys Announces Availability of 40nm PCI Express 2.0 PHY

Proven Interoperability with Industry Standard PCI Express Controller from Denali Software Streamlines IO Sub-System Design

SUNNYVALE, Calif.--(BUSINESS WIRE)--Nov. 2, 2009-- MoSys, Inc., a leading supplier of differentiated high density embedded memory and high data rate parallel and serial interface IP, today announced the availability of its PCI Express 2.0 PHY. MoSys' PHY complies with the PIPE 2.0 specification and provides the physical layer (PHY) interface that connects to industry standard PCI Express 2.0 controllers.

"The PCI Express standard, provided by PCI-SIG, is based on a very complex and technical specification requiring best-in-class IP,€ said David Lin, Vice President of Marketing at Denali Software. €œMoSys' PCI Express 2.0 PHY, together with our Databahn PCIe controller IP and PureSpec PCIe Verification IP, extends our ability to offer high-quality end-to-end interface solutions to meet the needs of our mutual 40nm customers."

€œThere is strong demand for high-quality, silicon proven SerDes interface IP at 40nm,€ said David DeMaria, Vice President of Business Operations for MoSys. "The availability of our PCI Express 2.0 PHY and its seamless interoperability with Denali€™s PCI Express controllers ensures speedy time to market for our customers€™ chip designs."

"The high speed interface requirements for our ASICs are demanding," said Anil Mankar, Senior Vice President of VLSI Engineering for Mindspeed Technologies. €œWe selected the PCI Express 2.0 solution from MoSys because it precisely met our requirements."

"Customers of our ASIC designs have stringent requirements for high speed PHYs,€ said Amal Bommireddy, Vice President of Engineering at AppliedMicro. €œMoSys€™ PCI Express PHYs have helped our ASIC design teams exceed those requirements.€

MoSys€™ PIPE 2.0 compliant PCI Express 2.0 PHY is available now to chip designers using 40nm and 65nm processes. The PHY is available for both wirebond and flipchip packages.

About MoSys, Inc.

Founded in 1991, MoSys® (NASDAQ: MOSY), develops, markets and licenses differentiated embedded memory and high speed parallel and serial interface IP for advanced SoC designs. MoSys€™ patented 1T-SRAM® and 1T-Flash® memory technologies offer a combination of high density, low power consumption, high speed and low cost advantages that are unmatched by other available memory technologies for a variety of networking, computing, storage and consumer/graphics applications.

MoSys€™ silicon-proven interface IP portfolio includes DDR3/2 Combo PHYs, as well as SerDes IP that support data rates from 1 Gigabit per second (Gbps) to 11Gbps, across a wide range of standards, including PCI-Express, XAUI, SATA, USB and 10G KR. MoSys IP has been production-proven in more than 175 million devices.

MoSys is headquartered in Sunnyvale, California. More information is available on MoSys' website at

MoSys and 1T-SRAM are registered trademarks of MoSys, Inc. 1T-Flash is a trademark of MoSys, Inc.

MoSys, 1T-SRAM and 1T-Flash are registered trademarks of MoSys, Inc. All other trademarks mentioned herein are the intellectual property of their respective owners.

Source: MoSys, Inc.

MoSys, Inc.
Kristine Perham, 408-731-1804