SUNNYVALE, Calif., June 24 /PRNewswire-FirstCall/ -- MoSys, Inc., (Nasdaq: MOSY), a leading provider of high-density system-on-chip (SoC) memory and analog/mixed-signal intellectual property (IP), today announced that LG Electronics is shipping the world's first mobile handset using the MoSys 1T-SRAM Dual-Port memory technology. The MoSys technology is an application-specific implementation of its industry-leading 1T-SRAM(R) memory IP for the cellular phone market. The MoSys 1T-SRAM Dual-Port Display macros have been designed specifically for mobile handset applications, such as those included in the LG Electronics AMOLED-based display.
The MoSys 1T-SRAM Dual-Port Display macro is used as the display buffer memory mounted on the display (chip-on-glass) or on the connecting cable (chip-on-film or tape carrier package). By keeping the display buffer memory on the display itself, LG Electronics should reduce the challenges inherent in electromagnetic interference (EMI), while cutting overall display power consumption. In the LG handset, the buffer memory must conform to unusual area and form factor requirements of the AMOLED display, which is easily accomplished using the MoSys 1T-SRAM technology.
Compatible with high-volume processes at major foundries and integrated device manufacturers, the MoSys 1T-SRAM Dual-Port Display macro uses standard foundry process technologies and offers a reduction in overall silicon area of up to 70 percent when compared to conventional embedded memory solutions.
Said Len Perham, MoSys' President and Chief Executive Officer, Our customers continue to innovate using the core MoSys 1T-SRAM technology, which enables new and exciting mobile consumer applications. We are seeing strong customer interest in our new MoSys Dual-Port Display macro, which is the first application-optimized memory built on our technology platform. We are pleased to have a leader like LG Electronics provide the first commercial implementation of that technology.
ABOUT MOSYS, INC.
Founded in 1991, MoSys (NASDAQ: MOSY), develops, markets and licenses innovative embedded memory and analog/mixed-signal intellectual property (IP) technologies for advanced SoCs used in a variety of home entertainment, mobile consumer, networking and storage applications. MoSys' patented 1T-SRAM and 1T- FLASH technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. MoSys' advanced analog/mixed-signal technologies include highly integrated Blu-ray DVD, Gigabit Ethernet, Serial ATA, and a range of high speed phase lock loop and analog-to-digital converter IP. MoSys' embedded memory IP has been included in more than 140 million devices demonstrating silicon-proven manufacturability in a wide range of processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
MoSys and 1T-SRAM are registered trademarks of MoSys, Inc. 1T-FLASH(TM) is
a trademark of MoSys, Inc.
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