MoSys To Announce Third Quarter 2007 Financial Results

SUNNYVALE, Calif.--(BUSINESS WIRE)--Oct. 10, 2007--MoSys, Inc., (NASDAQ: MOSY), a leading provider of high-density system-on-chip (SoC) memory and analog/mixed-signal intellectual property (IP), today announced it would release its third quarter 2007 financial results for the period ending September 30, 2007 on Tuesday, October 30, 2007, after the market closes. Following the release, the Company will host a live audio Web cast and conference call at 4:30 p.m. Eastern Time (1:30 p.m. Pacific Time).

Third Quarter Web Cast/Conference Call

To access the call, please dial 866.277.1184 and enter the pass code 76456881 at least 10 minutes prior to the start of the call.

    Date: Tuesday, October 30, 2007

    Time: 4:30 p.m. Eastern Time (1:30 p.m. Pacific Time)

    Conference Call Number: 866.277.1184

    International Callers: 617.597.5360

    Pass Code: 76456881

The conference call replay will be available for 48 hours beginning two hours after the call. The replay number is 888-286-8010 with a pass code of 85202789 international callers should dial 617-801-6888 and enter the same pass code at the prompt.

In addition, the live audio conference call and replay will be available on the investor relations section of the company's Web site at

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets innovative memory and analog/mixed-signal technologies for semiconductors. MoSys' patented 1T-SRAM(R) technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 110 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at

CONTACT: MoSys, Inc.
Jim Pekarsky, CFO, 408-731-1800
Shelton IR
Beverly Twing, Acct. Manager, 972-239-5119 x126

SOURCE: MoSys, Inc.