MoSys embedded 1T- FLASH(TM) macro running at 100Mhz exceeds competitive offerings
SUNNYVALE, Calif., July 17 /PRNewswire-FirstCall/ -- MoSys, Inc. (Nasdaq: MOSY), the leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP), today announced that it shipped its first 1T-FLASH memory macro to Luminary Micro. The MoSys 1T-FLASH IP runs at 100Mhz and is implemented in a standard 0.13u CMOS logic process. This flash technology is substantially faster than other embedded flash memory technologies. The MoSys technology is also the densest embedded Flash technology available on a standard CMOS process. Luminary Micro, a provider of embedded microcontrollers, will use the MoSys embedded 1T-FLASH memory technology in upcoming versions of its microcontrollers.
The availability of fast, high-density embedded flash memory for the first time on a pure CMOS process will enable companies like Luminary Micro to further extend the capabilities of their products.
"MoSys' technology will enable our Stellaris product line to serve markets that have been difficult to reach with conventional flash memory technology," said Jim Reinhart, CEO of Luminary Micro. "With the MoSys technology and its ability to run at up to 100 Mhz, we can provide new applications that before would have been impossible or impractical with conventional embedded Flash technologies."
"We have reached an important milestone in our 1T-FLASH program with the shipment of the first macro to Luminary Micro," said Chet Silvestri, President and CEO of MoSys. Silvestri added, "The market for microcontroller-based applications using dense, fast embedded non-volatile memory exceeds billions of units annually, and they require the kind of low cost, low operating power and fast performance that our new 1T-FLASH technology offers."
About Luminary Micro and Stellaris
About MoSys, Inc.
Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys' patented 1T- SRAM(R) and 1T-FLASH(TM) technologies offer a combination of high density, low power consumption, high speed and low cost that is unmatched by other memory technologies. MoSys licensees have shipped more than 110 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available at http://www.mosys.com. 1T-SRAM is a registered trademark and 1T-FLASH is a trademark of MoSys, Inc.
SOURCE MoSys, Inc.