MoSys Single-Port 1T-SRAM^® IP

High-density embedded 1T-SRAM. Optimize SoC cost, space, performance and power.

MoSys’s patented 1T-SRAM is a breakthrough memory technology offering an unprecedented combination of high density, performance, low power consumption and economy for system-on-chip (SoC) applications. Used successfully in over 130 million devices powering dozens of best-in-class electronic products, MoSys 1T-SRAM solutions are silicon-solid and production-proven. MoSys provides a range of custom and standard 1T-SRAM solutions for customers such as fabless semiconductor companies and integrated device manufacturers (IDMs). MoSys technology is supported in geometries from 250nm to 90nm, with 65nm now sampling and 55nm and 45nm in development.



For fabless chip companies, MoSys offers a broad selection of standard and custom 1T-SRAM macros, ready for manufacture at leading foundries such as Chartered, SMIC, TSMC and UMC. Customers can choose from preconfigured options or specify their own custom configurations.

Offerings include MoSys Single-Port 1T-SRAM CLASSIC Macros in a range of density, size, power and speed options. In addition, some foundries offer custom 1T-SRAM macros under their own brand names. For example, TSMC’s eDRAM memory offerings are based on MoSys technology and are manufactured under license from MoSys. Standard views, models and databases allow MoSys macros to be seamlessly integrated into the customer’s design flow.

Click here to view the complete listing of available macros.

Customers can also license technology from MoSys and customize it themselves, with support from MoSys. Many IDM customers go this route, combining the advantages of MoSys IP with their own process and technology investments, while speeding time-to-market with the help of MoSys services.

Ranging in size from 1.0 Mbit and up, 1T-SRAM designs can be specified in a wide variety of speed, timing and power options. Macro architectures are typically classified as either high performance or low power depending on the application, but customers can select specific power and performance points along a continuum to meet their precise requirements. Applications include:

• High Performance - High-speed networking, switching, graphics/imaging and home entertainment/gaming
• Low Power - Mobile phones, digital cameras, wireless products and other mobile consumer applications

The following chart specifies the optimal maximum speeds achievable with custom 1T-SRAM designs. Maximum speeds may be affected by user-specified design constraints.

Product Family Maximum Frequency (MHz) 180 nm High-Performance Low-Power   250 MHz 125 MHz 130 nm High-Performance Low-Power   350 MHz 150 MHz 90 nm High-Performance Low-Power   450 MHz 250 MHz 65 nm High-Performance   600 MHz