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Quote |
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The industry trend is to integrate more and more memory on-chip; MoSys' 1T-SRAM embedded memory is an excellent chice to enable compact SoC implementations.
— Kalar Rajendiran, Sr. Director of Marketing, eSilicon
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1T-SRAM memory macros enable our customers to achieve cost competitiveness while maintaining higher performance.
— Kimiaki Satoh, General Manager, Fujitsu |
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The combination of Mosys 1T-SRAM and NEC's 55nm embedded DRAM process technology provides the low cost and low power consumption needed by next-generation consumer products.
— MoSys News Release
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With the power, density and performance of MoSys IP, we can offer stereoscopic 3D graphics with world-beating performance of over 20 frames/second.
— HK Kim, CEO, NexusChips |
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Designing the Wii console tool required an incredible list of technological breakthroughs. MoSys’s high-performance 1T-SRAM was one important element.
— Genyo Takeda, General Manager,
Nintendo |
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The high density, low power consumption and flexible functionality of MoSys IP will help drive our expansion in areas like video surveillance and automotive imaging.
— Joe Montalbo, CEO, Pixim |
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MoSys technology is a key to our delivering the industry’s highest level of integration and providing all the features needed for a single-chip solution.
— David Coakley, VP, Teknovus |
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Now SoC designers will continue to have access to advanced eDRAM technology and design expertise from the world's largest semiconductor foundry.
— MoSys News Release |
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Leadership technology from MoSys enables our customers to create ultra-competitive solutions that meet their most demanding product requirements.
— Federico Arcelli, VP, VeriSilicon |
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1T-SRAM is the perfect answer to the growing need for high-density embedded memories in our products.
— Junji Torii, General Manager, Yamaha |