MoSys Dual-Port 1T-SRAM delivers all the proven advantages of MoSys memory technology—density, performance, low power and economy—in a dual-port architecture. It is the first embedded memory technology to meet the special demands of high-resolution display drivers in next-generation smart phones and other mobile devices.

These devices are adding higher resolution displays (quarter VGA and above), requiring larger frame buffers on the display driver chips. At the same time, space requirements are tightening. MoSys’s Dual-Port 1T-SRAM offers the first memory solution to meet these competing requirements:

• High Density—supports larger frame buffer memory sizes (1.3 megabits and up) in form factors small enough for two- and even one-chip display driver integration
• Dual-Port Architecture—one read/write port for the CPU, one write port for the display
• Aspect ratio—supports long thin layouts for chip-on-glass mounting (driver chips mounted in the narrow margins of the display glass)
• High Performance—provides the SRAM speeds required by frame buffers
• Low Power—provides energy-efficient operation for handheld battery life requirements
• Economy—delivers major cost advantage due to die area savings and manufacturability

Click here to view the complete listing of available 1T-SRAM macros.

MoSys offers Dual-Port 1T-SRAM in a range of solutions tailored to different system requirements and customer needs. Choices include:

• Fully configurable macros pre-qualified at leading foundries, ideal for fabless semiconductor companies
• Customized application-oriented macros for fabless semis and integrated device manufacturers (IDMs)
• Licensed technology, allowing customers to customize their own 1T-SRAM solutions, with support from MoSys. For example, IDMs can develop their own 1T-SRAM configurations or target 1T-SRAM to in-house process technologies.